High-K Gate Dielectric Structures by Atomic Layer Deposition for the 32nm and Beyond Nodes

Robert D. Clark,Steve Consiglio,Cory Wajda,Gert Leusink,Takuya Sugawara,Hajime Nakabayashi,Hemanth Jagannathan,Lisa F. Edge,P. Jamison,Vamsi Paruchuri,Ryosuke Iijima,Mariko Takayanagi,Barry P. Linder,J. Bruley,Matt Copel,Vijay Narayanan

High-K Gate Dielectric Structures by Atomic Layer Deposition for the 32nm and Beyond Nodes

2008

Robert D. Clark
Steve Consiglio
Cory Wajda
Gert Leusink
Takuya Sugawara
Hajime Nakabayashi
Hemanth Jagannathan
Lisa F. Edge
P. Jamison
Vamsi Paruchuri
Ryosuke Iijima
Mariko Takayanagi
Barry P. Linder
J. Bruley
Matt Copel
Vijay Narayanan

TEL Technology Center, America, 255 Fuller Rd., Suite 244, Albany, NY 12203 TEL LPDC FEOL Group, 650 Mitsuzawa, Hosakacho, Niraski, Yamanashi, 407-0192, Japan IBM @ Albany Nanotech, 255 Fuller Rd., Suite 134, Albany, NY 12203 Toshiba America Electronic Components Inc. @ T. J. Watson Research Center, Yorktown Heights, NY 10598 IBM Research Division, T. J. Watson Research Center, Yorktown Heights, NY 10598

Keywords:

High-κ dielectric
Gate dielectric
Gate oxide
Atomic layer epitaxy
Condensed matter physics
Atomic layer deposition
Watson
IBM
Chemistry
Materials science
Engineering physics

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