Positive bias temperature instability degradation of buried InGaAs channel n-MOSFETs with InGaP barrier layer and Al 2 O 3 dielectric

PBTI stress induced interface trap density in buried InGaAs channel n-MOSFETs with InGaP barrier layer and AI 2 O 3 dielectric is investigated. DC I d -V g measurements show both degradations of positive ΔV g and sub-threshold swing (S) in the sub-threshold region, also show degradation of positive ΔV g in the on-current region. The I d -V g degradation is mainly contributed by generation of acceptor-like near interface traps under stress.