Design, Simulation and Fabrication of Highly Sensitive Cooled Silicon Bolometers for Millimeter-Wave Detection

This paper reports our results on the electrothermal modeling of cryogenic silicon bolometers with pixel pitches of 500 and 1200 µm designed for cosmic microwave background polarimetric observation in 0.6 mm and 1.5 mm bands. These detectors should provide a high responsivity, typically around 1011 V/W, and a very low noise equivalent power (NEP) of 10−18 W/Hz1/2 between 50 and 100 mK. They are based on doped silicon thermometers, which exhibit a nonohmic behavior described by the “hot electron model” (HEM) at very low temperature under high bias currents. We compare this model to the experimental characterization of these thermometers at cryogenic temperatures to confirm that the HEM is governing their electrical characteristics and their sensitivity at very low temperature. Finally, this model is used to derive the simulated responsivity and NEP performances of the pixels under weak and moderate optical power illumination.