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Statistical characteristics of total ionizing dose effects of bipolar transistors
Statistical characteristics of total ionizing dose effects of bipolar transistors
2021
Li Shun
中国工程物理研究院微系统与太赫兹研究中心, 成都 ,Microsystem
Song Yu
Zhou Hang
Dai Gang
Zhang Jian
Keywords:
Materials science
Bipolar junction transistor
Absorbed dose
Optoelectronics
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