Ion Beam Neutralization Using FEAs and Mirror Magnetic Fields

Advanced implantation systems used for semiconductor processing require transportation of ion beams which are quasi‐parallel and have low energy, such as (11B+,31P+,75As+) with energy in the range Eion = 200–1000 eV. Compensation of ion beam divergence may be obtained through electron injection and confinement in regions of non‐uniform magnetic fields. Field emitter arrays with special properties are used as electron sources. The present study shows that electron confinement takes place in regions of gradient magnetic field, such as nearby analyzing, collimator and final energy magnets of the ion beam line. Modeling results have been obtained using Opera3D/Tosca/Scala. In regions of gradient magnetic field, electrons have helical trajectories which are confined like a cloud inside curved “magnetic bottles”. An optimal range of positions with respect to the magnet for placing electron sources in gradient magnetic field has been shown to exist.