Bulk n-channel MOSFETs with Buried Stressor at the 28nm Process Node

Abstract We report for the first time the implementation of SiGe buried stressors in a foundry production process at 28 nm and the observation of an additional benefit of improved short channel behavior (reduced DIBL) that results in at least 15% improvement in Idlin-Ioff independent of any benefit obtained from tensile strain. For RF applications, fT is projected to improve by at least 40% in n-MOSFETs with SiGe buried stressor.