Laser Recrystallization of InP Films on Oxidized Si Substrate

The InP films with thickness of 1–2 µm and resistivity of 10–10−3 Ω-cm were sputtered on oxidized Si substrates heated at about 300°C to form as InP SOI. Using X-ray diffraction, ED, TEM, Hall and RBS, we have investigated the grain size, compositions, thermal stability and electrical characteristics of InP SOI before and after CW Ar+ laser recrystallization. The sputtered InP SOI films appear as polycrystalline and its grain size increases with increasing of irradiated laser power from 5.8 to 7.0 W at a beam diameter of 70 µm. After irradiation at 7 W the single crystal ED patterns are obtained, the mobility and carrier concentrations amount to 103cm2/Vs and 1017cm−3, respectively, and the compositions are stoichiometric.