Hot-carrier induced degradation in InP/InGaAs/InP double heterojunction bipolar transistors

In this paper, bias stress tests and hot carrier induced degradation behavior in InP/InGaAs/InP double heterojunction bipolar transistors are reported. We have found that an unrecoverable increase of emitter-collector reverse current (I/sub CEO/) occurs during reverse-bias B-C junction stress, which is mainly due to the increase of the B-C junction leakage current. Furthermore, the hot carrier induced damage during the B-C bias stress does not only occur at the B-C junction but also at the B-E junction region. This subsequently causes the degradation of the device current gain (/spl beta/). We also show the dependence of the device degradation on different stress bias voltages.