Impact of Relative Gate Position on DC and RF Characteristics of High Performance AlGaN/GaN HEMTs
2020
We have investigated the impact of relative gate position between source and drain on the DC and RF characteristics for AlGaN/GaN high electron mobility transistors. Devices with fixed source drain separation (
${L}_{\text {SD}}$
) of $5~\mu \text {m}$
, width (
${W}$
) of ${2}\times {50}\,\,\mu \text {m}$ and gate length (
${L}_{G}$
) of 200 nm are fabricated and characterized. The relative position of the gate is varied with constant ${L}_{\text {SD}}$
. The value of saturation drain current (
${I}_{\text {DS},\text {sat}}$
) and maximum transconductance (
${g}_{m,\text {max}}$
) change from 740 mA/mm and 168 mS/mm for gate to source separation (
${L}_{\text {GS}}$
) of $3.8~\mu \text {m}$ to 1071 mA/mm and 245 mS/mm for ${L}_{\text {GS}} = {0.25}\,\,\mu \text {m}$
, respectively. The corresponding breakdown voltage (
${V}_{\text {br}}$
) significantly improves from 65 V (for ${L}_{\text {GS}} = {3.8}\,\,\mu \text {m}$
) to 189 V (for ${L}_{\text {GS}} = {0.25}\,\,\mu \text {m}$
). The unity current gain frequency (
${f}_{T}$
) is observed to remain constant at 55 GHz for all positions of the gate. However, output power density is found to increase from 3.8 to 5.1 W/mm for the same relative change in the gate position.
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