A 95 GHz bandwidth 12 dBm output power distributed amplifier in InP-DHBT technology for optoelectronic applications

This paper presents a DC-95 GHz distributed amplifier (DA) based on an InP/GaAsSb/InP 800 nm DHBT technology. The circuit employs five cascode unit cells with 0.8 µm × 6 µm HBTs. To obtain flat small-signal gain and group delay characteristics, inductive peaking is used at the collector of the common-base transistor. The amplifier exhibits 12 dB gain from 1–100 GHz, with S 11 and S 22 below −10 dB throughout the frequency range. DC consumption is only 126 mW and group delay remains below 20 ps up to 65 GHz. The simulated saturated output power reaches 12 dBm with a variation of ±0.75 dB across the entire band of operation. This performance is very useful in high-speed, ultra-low power optical systems.