High Power and High Efficiency GaAs FETs in C Band

An internally matched high power and high efficiency GaAs FET combined with four FET chips has been developed with an output power of 20 W (PldB) and 39% power-added efficiency around 4 GHz. This excellent result was achieved mainly by the introduction of the stepped gate recess combined with the refractory metal Schottky contact which can increase simultaneously the breakdown voltage and maximum channel current.