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Characterization of the parasitic effects in InAlN/AlN/GaN HEMTs
Characterization of the parasitic effects in InAlN/AlN/GaN HEMTs
2010
Nathalie Malbert
C. Sury
Arnaud Curutchet
Nathalie Labat
Christian Dua
M. Oualli
Virginie Hoel
Y. Douvry
J.C. De Jaeger
Catherine Bru–Chevallier
W. Chikaoui
Jean-Marie Bluet
Keywords:
Optoelectronics
characterization
Materials science
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