Voltage-Driven High-Speed Skyrmion Motion in a Skyrmion-Shift Device

$M\phantom{\rule{0}{0ex}}a\phantom{\rule{0}{0ex}}g\phantom{\rule{0}{0ex}}n\phantom{\rule{0}{0ex}}e\phantom{\rule{0}{0ex}}t\phantom{\rule{0}{0ex}}i\phantom{\rule{0}{0ex}}c$ $s\phantom{\rule{0}{0ex}}k\phantom{\rule{0}{0ex}}y\phantom{\rule{0}{0ex}}r\phantom{\rule{0}{0ex}}m\phantom{\rule{0}{0ex}}i\phantom{\rule{0}{0ex}}o\phantom{\rule{0}{0ex}}n\phantom{\rule{0}{0ex}}s$ are topologically protected chiral spin textures that are promising for memory and logic applications. Low-energy manipulation of skyrmions is crucial, especially in pushing them around; to date, a large driving current has been required for high-speed skyrmion motion, resulting in significant Joule heating and device instability. The authors simulate a simple structure, featuring identical, equidistant electrodes on a nanowire of uniform thickness, that allows voltage-driven high-speed skyrmion motion at low power---a promising development in skyrmion nanodevices.