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Reduction of Impurity Incorporation into MOVPE-grown GaN films on ScAlMgO 4 Substrate
Reduction of Impurity Incorporation into MOVPE-grown GaN films on ScAlMgO 4 Substrate
2017
T. Iwabuchi
Keywords:
Optoelectronics
Substrate (chemistry)
Metalorganic vapour phase epitaxy
Impurity
Materials science
Correction
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