Wakeup-Free and Endurance-Robust Ferroelectric Field-Effect Transistor Memory Using High Pressure Annealing

Wakeup-free and endurance-robust HfZrO2 (HZO) ferroelectric field-effect transistor (FeFET) was fabricated on a silicon-on-insulator substrate. After a high-pressure forming gas annealing as the last alloy step, the performance and endurance of the FeFETs were significantly improved by trap states reduction, polarization enhancement, and wake-up elimination. As the result, the FeFETs show superior endurance exceeding 1010 cycles and robust retention behavior at program/erase biases of ±3.5V and pulse width of 100 ns. These results indicate that appropriate thermal treatment for the interlayer and ferroelectric material could substantially improve FeFET performance and reliability.