Investigation of temperature variant dielectric and conduction behaviour of strontium modified BaBi 4 Ti 4 O 15 ceramic

The manuscript presents the systematic analysis of structural, dielectric and conduction behaviour of strontium doped of BaBi4Ti4O15 (BSBT) ceramics, synthesized by solid-state route. The structural analysis of 4-layered Aurivillius structure with orthorhombic symmetry of BSBT compounds were studied by X-ray diffraction. The surface morphologies obtained by scanning electron microscope confirms random orientation of plate-like grains with an enhancement of grain size due to Sr modification. Raman spectroscopy analysis shows shifting of peak position due to modification which is strongly correlated to the orthorhombic distortion. The dielectric behavior with response of temperature shows shifting of phase transition temperature (Tc) to higher temperature and decrements of dielectric constant with increasing Sr-content. The thermal variation of conduction behavior in all composition shows negative temperature coefficient of resistance behaviour. The temperature sensitivity coefficients for all composition were calculated using standard equations. Arrhenius equation was used to calculate the activation energies which suggested that oxygen vacancy is basically accountable for conduction behavior. The combination of high resistivity, temperature sensitivity coefficient β and high activation energy suggests that the SBBT ceramics is more extensive towards wide temperature range application.