Quantum efficiencies of PtSi∕p-Si composites in the 3–5μm wavelength range

2005 
A formula for the quantum efficiency of Schottky barrier metal-semiconductor composite photon detectors is derived. It includes the two factors that completely describe the quantum efficiency of a planar Schottky barrier detector. It has in addition a third factor, that can be larger or smaller than one depending on the ratio of the mean-free path of the photoexcited carriers to the dispersed metal particle sizes. Using this formula, quantum efficiencies, due to photoexcited holes in experimentally prepared PtSi∕p-Si composite films, were calculated in the 3–5μm micron wavelength range using measured absorption and particle size data. The results provide evidence for the contribution of particle size effects to the efficiencies in PtSi∕p-Si composite detectors and are consistent with previous particle size effects in other metal-semiconductor composite materials.
    • Correction
    • Source
    • Cite
    • Save
    • Machine Reading By IdeaReader
    7
    References
    3
    Citations
    NaN
    KQI
    []