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Criteria for versatile GaN MOVPE tool: high growth rate GaN by atmospheric pressure growth
Criteria for versatile GaN MOVPE tool: high growth rate GaN by atmospheric pressure growth
2011
KohMatsumoto
Kazutada
Ikenaga
JunYamamoto
KazukiNaito
YoshikiYano
AkinoriUbukata
HirokiTokunaga
TadanobuArimura
KatsuakiCho
ToshiyaTabuchi
Keywords:
Metalorganic vapour phase epitaxy
Atmospheric pressure
Growth rate
Optoelectronics
Materials science
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