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Resistivity study of si-doped GaN nanowires grown by catalyst-free MBE | NIST
Resistivity study of si-doped GaN nanowires grown by catalyst-free MBE | NIST
2008
Lorelle Mansfield
Paul T. Blanchard
Devin M. Rourke
Aric W. Sanders
Norman A. Sanford
Kristine A. Bertness
Keywords:
Nanostructure
NIST
Doping
Nanowire
Molecular beam epitaxy
Electrical resistivity and conductivity
Catalysis
Inorganic chemistry
Nitride
Materials science
Contact resistance
Optoelectronics
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