Integration of InGaAs/InP structure above ROIC-CMOS for SWIR imaging
2017
Nowadays short wavelength infrared (SWIR) imaging based on InP/InGaAs photo-diodes is quite popular for uncooled camera. The state of the art technology is a double layer planar heterointerface focal plane array [1]. But, it remains expensive and only used for defense and scientific applications. Its cost comes essentially from the individually hybridization of photo-diodes array with read-out circuit, by the mean of an indium-bumps flip-chip process. We suggest an alternative method for hybridization, in order to lowering the cost and providing a sustainable process to decrease the pixel pitch, and also increase the possible format. It consists in a direct integration of InP/InGaAs/InP structure above a finished read-out circuit (with CMOS technology) and circular diode architecture.
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