Heteroepitaxial growth of InGaSb on GaSb/Si(111)- √ 3× √ 3-Ga surface phase with two step growth method

An investigation was performed on heteroepitaxial growth of In x Ga 1−x Sb on Si(111)- √ 3× √ 3-Ga substrate following a two step growth method. The 1st layer flux ratio of Ga and Sb has been controlled precisely whereas rate of In and Ga varied for In x Ga 1−x Sb in the 2nd layer. Ratio x ranges 0.75 to 0.9 with a step 0.05. To analyze the growth reflection high energy electron diffraction (RHEED), scanning electron microscopy (SEM) images have been studied. It was found that the roughness of the grown surfaces are more responsive to Ga rich circumstances.