Radio-frequency characteristics of graphene monolayer via nitric acid doping

Abstract The radio-frequency, i.e. 0.5–40 GHz, characteristics of chemical vapor deposition-grown graphene monolayer via HNO 3 doping is experimentally investigated. According to the obtained results, the sheet resistance of HNO 3 -treated graphene decreases about half compared to bare graphene. In the case of radio-frequency characteristics, the transmission coefficient and effective conductivity of the HNO 3 -treated graphene are more enhanced than those of the bare graphene. Moreover, the intrinsic resistance and inductance of the HNO 3 -treated graphene itself show diminishing tendency with frequency increase. As a result, it is verified that the direct current as well as high frequency characteristics of graphene are improved by using the chemical doping method.