Observation of Shrinkage Process by Annealing of Grown-in Defect in Cz–Si Crystal

We developed an annealing apparatus which heats transmission electron microscopy (TEM) specimens. The equipment can reach a maximum annealing temperature of 1400°C in gas ambient atmosphere. During the observation of vacuum annealing, the shrinkage of a grown-in (octahedral void) defect was observed at temperatures between 1080–1100°C. In the case of oxygen annealing at 1100°C, the disappearance of the sidewall oxide film was prevented, and shrinkage of the void did not occur.