Regular Trends in Fine Structure and Localization of Excitons in Type II GaAs/AlAs Superlattices With a Gradient of Composition

Abstract : Optically detected magnetic resonance and level anticrossing spectroscopy were used to reveal regular trends in the behavior of the fine structure of excitons, their dynamic properties and localization at the opposite interfaces in type II GaAs/AlAs superlattices grown by MBE with a gradient of layer thicknesses in the SL plane.