ACCELERATED RFLIFETESTING OFGANHFETs

Thisworkreports theresults ofthefirst three temperature accelerated RF life test onmillimeter-wave GaNHeterostructure Field Effect Transistors (HFETs) at10Ghz.2x100umtransistors werestressed at2dBcompression withapreRFbias condition ofIds = 100mA/mmandVds = 25V.Thethree channel temperatures used instudy were285°C, 315°Cand345°C.Anactivation energy of 1.80 eVwasextracted giving aMTTFatT,h= 125°Cof3.5x109 hours. [Keywords: GaNHFET,Reliability, RFLife test]