The electronic structure of In- and As-terminated InAs(001) surfaces

Abstract The InAs(001) 2 × 4 and 4 × 2 surfaces have been investigated by angle-resolved photoemission. The X 3 and X 5 points were found to be located 6.0 and 2.7 eV below the valence band maximum, respectively, and the dispersion of bulk bands along the Г-X direction in the bulk Brillouin zone were well described by a theoretical calculation. From angle-resolved valence band spectra measured along the high symmetry directions [110] and [110], three surface induced states were identified on both the InAs(001)4 × 2 and the InAs(001)2 × 4 surface.