Low Temperature Open-Air Plasma Deposition of Amorphous Tin Oxide for Perovskite Solar Cells

Abstract A low-temperature, open-air plasma process to deposit amorphous SnOx thin films as an electron-transport layer in a planar-heterojunction n−i−p perovskite solar cell is reported. Open-air plasma processing is a scalable, low capital expenditure technique capable of manufacturing-scale production without enclosures or vacuum pumps. The technique provides flexibility to tune SnOx film composition and properties by adjusting several easily accessible processing parameters. In this study, we demonstrate large area SnOx thin film deposition on substrates up to 100 cm2. The SnOx films are deposited using monobutyltin trichloride as the chemical precursor and formed without any post-annealing, which has the potential for lowering costs as an in-line process. The film exhibits low surface roughness, excellent optical transmission of greater than 90 % across the visible regime, and low electrical resistivity of 13.3 Ω*m, which is multiple orders of magnitude lower than previously reported values of amorphous SnO2 thin films. The film is then incorporated into a planar perovskite solar cell with a power conversion efficiency of 11.8 %. These factors suggest that open-air plasma-deposited SnOx thin films can potentially be compatible with low-cost and large-scale fabrication of organohalide lead perovskite solar cells and modules.