Highly Doped Single Walled Carbon Nanotubes Deposited as the Back Buffer Layer on CdTe Devices

Due to the low Fermi level position in CdTe, back contacts to CdTe devices often lead to downward band bending at the back interface. SWCNTs potentially have a lower Fermi level than CdTe, but obtaining this level of doping in the SWCNTs after they have been applied to the CdTe is difficult to accomplish. Here, we show that SWCNT films can be doped, redispersed, and redeposited while maintaining a high level of doping. We are investigating if depositing doped SWCNTs onto CdTe is a viable method for improving the back interface of CdTe devices by apply doped and undoped SWCNTs to the back of $2\ \mu\mathrm{m}$ CdTe device structures.