Interface structure of a GaAs-AlAs superlattice MBE grown on a GaAs vicinal surface

Abstract A GaAs-AlAs superlattice MBE grown onto a GaAs vicinal surface misoriented by 3° from the (001) plane toward the (111) Ga plane, was investigated using different transmission electron microscopy techniques, such as (002) dark field image, transmission electron diffraction and high resolution electron microscopy together with image simulation. Under high resolution electron microscopy, we describe the interface structure. We evaluate the terrace width distribution showing the different behaviour of top and bottom interfaces. Moreover, some typical step contrast bring informations about the step front structure.