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Fabrication of red LED with Eu-doped GaN active layer using rf-plasma-assisted molecular beam epitaxy method
Fabrication of red LED with Eu-doped GaN active layer using rf-plasma-assisted molecular beam epitaxy method
2017
Kensuke Tomoyasu
Sekiguchi Hiroto
Tateishi Hiroki
Yamane Keisuke
Okada Hiroshi
Wakahara Akihiro
Keywords:
Doping
Plasma
Molecular beam epitaxy
Optoelectronics
Analytical chemistry
Materials science
Fabrication
Active layer
Correction
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