Influence of high-dose γ irradiation on electron mobility in a silicon inversion layer

B. Majkusiak,A. Jakubowski,K. Grigorov,A Balasiński

Influence of high-dose γ irradiation on electron mobility in a silicon inversion layer

1990

B. Majkusiak
A. Jakubowski
K. Grigorov
A Balasiński

An influence of high‐dose γ irradiation on the dependence of electron mobility on transverse electric field in the silicon surface inversion layer is experimentally determined and considered.

Keywords:

Electron mobility
Electromagnetic radiation
Irradiation
Boundary layer
Optics
Semimetal
Inversion (meteorology)
Silicon
Nuclear magnetic resonance
Electric field
Chemistry
Transverse plane
γ irradiation
Physics

Correction
Source
Cite
Save
Machine Reading By IdeaReader

References

Citations