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(Invited) GaN-Based Multiple 2DEG Channel BRIDGE (Buried Dual Gate) HEMT Technology for High Power and Linearity
(Invited) GaN-Based Multiple 2DEG Channel BRIDGE (Buried Dual Gate) HEMT Technology for High Power and Linearity
2019
K. Shinohara
C. King
Eric J. Regan
M. P. Gómez
J. Bergman
Andrew D. Carter
Andrea Arias
Miguel Urteaga
Berinder Brar
Ryan Page
Reet Chaudhuri
Moudud Islam
Huili Grace Xing
Debdeep Jena
Keywords:
Communication channel
High-electron-mobility transistor
Optoelectronics
Linearity
Materials science
dual gate
Correction
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