Perovskite quantum dot based resistive memory with very low operating power

A resistive memory device using organo metal halide perovskite (CH3NH3PbBr3) quantum dots sandwiched between two PMMA layers with a very low SET/ RESET voltage and operating current is demonstrated in this paper. Because of the low operating voltages and currents, the operating power of the perovskite quantum dot memory device is very low. Perovskite quantum dots were prepared using the chemical method, namely ligand assisted reprecipitation method. It was then incorporated into PMMA to form a quantum dot - polymer composite. The composite was sandwiched between two PMMA layers by a successive spin coating technique. The SET voltage of the resulting device was low ∼10 mV. Operating current of the device was in micro ampere range. Hence the operating power of the device was very low and was of the order of 1 micro watt. ON/OFF current ratio of 10 was obtained for the fabricated memory device. The difference between resistances at ON and OFF states was ∼400 ohms under positive bias and ∼180 ohms under negative bias.A resistive memory device using organo metal halide perovskite (CH3NH3PbBr3) quantum dots sandwiched between two PMMA layers with a very low SET/ RESET voltage and operating current is demonstrated in this paper. Because of the low operating voltages and currents, the operating power of the perovskite quantum dot memory device is very low. Perovskite quantum dots were prepared using the chemical method, namely ligand assisted reprecipitation method. It was then incorporated into PMMA to form a quantum dot - polymer composite. The composite was sandwiched between two PMMA layers by a successive spin coating technique. The SET voltage of the resulting device was low ∼10 mV. Operating current of the device was in micro ampere range. Hence the operating power of the device was very low and was of the order of 1 micro watt. ON/OFF current ratio of 10 was obtained for the fabricated memory device. The difference between resistances at ON and OFF states was ∼400 ohms under positive bias and ∼180 ohms under negat...