Properties of MgB2 thick film on silicon carbide substrate

We have successfully synthesized MgB2 thick films on 4H-SiC substrate by hybrid physical–chemical deposition (HPCVD). The films have transition temperature Tc above 40 K. X-ray diffraction (XRD) shows the c-axis oriented structure of MgB2, with Mg and small MgO impurities. The critical current density Jc, estimated using the measured magnetic hysteresis loop and the Bean model, is 6 MA cm−2 in self-field at 10 K.