Addenda to photoluminescence and electron paramagnetic resonance studies of defect centers in porous silicon

Abstract This work includes addenda to the paper entitled photoluminescence and electron paramagnetic resonance studies of defect centers in porous silicon (PS) which was published in this journal. The readers can readily obtain the principal values of g ∥ and g ⊥ from the de-convolution of the effective principal g -values of the spin resonance data measured at various rotating angles of the magnetic field and the crystal axes.