Influence of the quantum well models on the numerical simulation of planar InGaN/GaN LED results

Within this paper, we present electric model of a light emitting diode (LED) made of gallium nitride (GaN) followed by examples of simulation results obtained by means of Sentaurus software, which is the part of the TCAD package. The aim of this work is to answer the question of whether physical models of quantum wells used in commercial software are suitable for a correct analysis of the lateral LEDs made of GaN.