Recoil effects for valence and core photoelectrons inV3Si

Hard and soft x-ray photoelectron spectroscopy was performed for core and valence electrons in V${}_{3}$Si. The recoil effects on the photoelectron emission were observed not only in the case of the Si 2$p$ core level, but also for the valence band, although such effects were not observed for the V 2$p$ and V 3$p$ core levels. The valence-band results are compared with the results of the theoretical model calculation based on the tight-binding cluster approximation and harmonic approximation for lattice vibrations. The Si 2$p$ core-level results interpreted as due to the single nucleus recoil effects are consistent with the interpretation of those of the valence electrons calculated on these approximations. From the ${E}_{\mathrm{B}}$ dependence of the valence-band recoil shifts, useful information is obtained on the Si 3$p$ partial density of states near the Fermi level.