Electronic Properties of Multilayer MoS2 Field Effect Transistor with Unique Irradiation Resistance
2021
Due to their small size and low power consumption, two-dimensional (2D) MoS2 devices have emerged as attractive candidates for next-generation nanoelectronics. However, in some particular working e...
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
50
References
3
Citations
NaN
KQI