Ion implantation and anneal to produce low resistance metal–diamond contacts

Abstract Contacts to boron-doped, (100)-oriented diamond implanted with Si or with Si and B were formed and the effects of dose, implantation energy and anneal treatment on the specific contact resistance were examined. Ti/Au contacts on heavily implanted diamond (10 16 Si ions cm −2 , E i =30 keV or 10 17 Si and B ions cm −2 , E i =15 keV (Si) and E i =10 keV (B)) had a specific contact resistance lower than the best contacts produced on unimplanted diamond. A specific contact resistance of (1.4±6.4)×10 −7  Ω cm −2 was achieved following a 450°C anneal. The results were consistent with a reduction in barrier height brought about by silicide formation. Light silicon implantation (10 13 ions cm −2 ) or relatively light dual implantation (B, Si 16 ions cm −2 ) did not reduce the specific contact resistance. Increasing the diamond conductivity by 4×10 4 decreased the specific contact resistance by over three orders of magnitude, in agreement with the trend observed by Prins (J.F. Prins, J. Phys. D 22 (1989) 1562).