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Oxygen Ion Beam Induced Abnormal Topographic Development at the Ta / Si Interface Studied by SIMS, XPS, and AFM
Oxygen Ion Beam Induced Abnormal Topographic Development at the Ta / Si Interface Studied by SIMS, XPS, and AFM
1995
K.-T. Kim
D. W. Moon
I. C. Jeon
Keywords:
Oxygen
Ion beam
Atomic force microscopy
X-ray photoelectron spectroscopy
Analytical chemistry
Materials science
Beam (structure)
oxygen ions
Correction
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