Atomic-layer-deposited SnO film using novel Sn(dmamb)2 precursor for p-channel thin film transistor

Abstract Atomic layer deposition of SnO was explored using a novel Sn complex, bis(dimethylamino-2methyl-2butoxy)tin(II) [Sn(dmamb)2], and H2O as the Sn precursor and reactant, respectively. Sn(dmamb)2 showed a facile ligand exchange reaction with H2O at temperatures of 100–200 ℃, which resulted in the fabrication of pure SnO thin films. Amorphous SnO films were obtained at all the investigated temperatures, but the pure Sn2+–O2− phase was observed only in the films produced at 100 and 150 ℃. The amorphous SnO was crystallized by a rapid thermal annealing post-process in N2 ambient at 450 ℃. A bottom-gate thin film transistor was fabricated using a crystallized SnO channel layer, and excellent drain current modulation and p-type behavior were obtained, with an on/off ratio of ∼7 × 104 and a saturation field effect mobility of 0.5 cm2/V·s.