In 0.83 Ga 0.17 As photodetectors with different doping concentrations in the absorption layers

Abstract The performances of wavelength-extended In 0.83 Ga 0.17 As PIN photodetectors with 8 × 10 15 or 4 × 10 16  cm −3 doped absorption layers were investigated and compared at different temperatures and bias voltages. Results displayed that they showed comparable device performance around room temperature and low bias voltages, but relatively large difference at lower temperatures and higher bias voltages. At lower operation temperatures the In 0.83 Ga 0.17 As photodetectors with 8 × 10 15  cm −3 doped absorption layers showed smaller dark currents and higher resistance area products R 0 A than those with 4 × 10 16  cm −3 doped absorption layers. It was ascribed to the reduced trap-assisted tunneling dark current in the photodetector with the lower doped In 0.83 Ga 0.17 As absorber layer.