Temperature dependent vacancy concentrations on Inp(110) surfaces

The thermal formation of P monovacancies is studied as a function of time and temperature between 293 K and 480 K on InP(110) surfaces using scanning tunneling microscopy. The formation rate of the P vacancies increases up to 435 K. Above 435 K both the vacancy formation rate and the maximum vacancy concentration decrease. The highest vacancy concentration is 5×1012 cm−2. Annealing the samples at temperatures higher than 480 K reduces the vacancy concentration to values observed at room temperature. The results are explained in terms of two activated mechanisms with different rates: thermal vacancy‐adatom pair formation with subsequent desorption of phosphorus from the surface and anion outdiffusion from the bulk.