Influence of some n-type InSb properties on the main parameters of infrared photoconductive detectors

Abstract Infrared photoconductive detectors were prepared from three undoped n-type InSb single crystals with different electron concentration and mobility values. The single crystals were grown by the Czochralski method. The spectral responsivity and spectral detectivity of the detectors were determined as functions of the power dissipation density of the device. A remarkable improvement in performance was observed for the purest specimen in comparison with earlier reported data.