Effects of Oxygen Contents in the Active Channel Layer on Electrical Characteristics of IGZO‐Based Thin Film Transistors

The authors report the fabrication of high performance a‐IGZO thin film transistors (TFTs) with polymer gate dielectric prepared by spin‐coating on a glass substrate. It was found that transmittance of the deposited polymer film was larger than 90% at 600 nm. It was also found that the a‐IGZO TFT prepared with 0.14% oxygen partial pressure with annealing could provide us a higher mobility (i.e.,17.5 cm2/Vs) while maintaining good substrate swing and good Ion/Ioff.