Effect of graphene quantum dots addition on photoelectric performances of CdSSe

Abstract CdSSe/graphene quantum dots (CdSSe/GQDs) composites were prepared by a hydrothermal method in the way of electrostatic interaction. The structure, morphology and material performance were investigated by various physical and chemical analyses. According to the results of X-ray photoelectron spectroscopy, the GQDs were compounded into composites. Moreover, the composites contained C–O–C and C C functional groups from Fourier transform infrared test results. The obtained CdSSe/GQDs composites demonstrated a superior photoelectric performance in comparison to the pure CdSSe semiconductor. The GQDs contents had a great effect on the photocurrent density and charge transfer resistance of the CdSSe/GQDs composites. As the amount of GQDs increased to 0.15 wt%, the photocurrent response reached 1.31 × 10−5 A/cm2, which was three times higher than that of CdSSe.