DRAM Reliability Degradation By Dynamic Operation Stress During Burn-In

The circuit to apply dynamic operation stress (DOS) to dynamic random access memory (DRAM) cell in wafer burn-in (WBI) mode is successfully implemented. We have verified that the degradation of data retention time occurred during burn-in (BI) test is mainly attributed to DOS-induced hot carrier (HC) degradation of DRAM cell. The characterization result of DRAM reliability by DOS-applying method in WBI mode is a good agreement with that by real operation stress in package burn-In (PBI) mode.