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Effect of N Bonding Structure in AlON on Leakage Current of 4H-SiC MOS Capacitor
Effect of N Bonding Structure in AlON on Leakage Current of 4H-SiC MOS Capacitor
2016
Wakana Takeuchi
K. Yamamoto
T Mimura
Mitsuo Sakashita
T Kanemura
Osamu Nakatsuka
Shigeaki Zaima
Keywords:
Materials science
Optoelectronics
Leakage (electronics)
Capacitor
mos capacitor
Correction
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