Атомно-силовая микроскопия пленок позитивного диазохинонноволачного фоторезиста, имплантированного ионами бора

Using atomic-force microscopy, we studied the modification of the surface of a positive photoresist of FP9120 implanted with B+ ions with energy of 100 keV in the dose range of 5∙10^14–1∙10^16 cm^-2. It was found that, at low doses of implantation of ions, pyramidal structures with heights of up to 19 nm and dimensions at the base of up to 4–20 nm randomly located on the surface of photoresist films were found. Increasing the implantation dose over 1∙10^15 cm^-2 leads to smoothing of the pyramidal structures. Their height decreases to 2–5 nm, and the dimensions at the base increase to 50–100 nm. The formation of these structures is due to the relaxation of local elastic compressive stresses in the polymer film.