Triboelectric nanogenerator-based anodic bonding of silicon to glass with an intermediate aluminum layer

Abstract The application of anodic bonding with metal or alloy films as the intermediate layer in micro electromechanical systems (MEMS) is becoming more widespread. Simultaneously, the realization of lower bonding voltage and current is an urgent problem to be solved in anodic bonding, cause large voltages and currents can cause damage and failure to tiny devices of MEMS. Sputtering aluminum as an intermediate layer, well-bonded silicon to glass wafers can be obtained with lower bonding current by applying triboelectric nanogenerator (TENG) instead of traditional direct-current (DC) power supply for the first time. Meanwhile, the tensile strength of the bonded wafers with an intermediate aluminum layer is up to 20 MPa, which is comparable with the DC driven bonded strength and is also 50 % higher than that without the aluminum layer. The TENG-based anodic bonding of silicon to glass with an aluminum layer has good bonding quality, which exhibits potential usefulness for application in MEMS packing.